Influence of Radiative and Non-Radiative Recombination Lifetimes and Feedback Strength on the States and Relative Intensity Noise of Laser Diode

A systematic treatment of the influence optical feedback (OFB) and ratio radiative non-radiative recombination lifetime (τr/τnr) on relative intensity noise (RIN) system dynamics a semiconductor laser (SL) is presented. We found that τr/τnr causes significant change in noise, states, route to chaos such system. Laser transit from continuous wave (CW) periodic oscillation (PO) becomes faster terms OFB strength by increasing τr/τnr. The was identified three distinct operating regions, namely, PO, period doubling (PD), sub-harmonics (SH), which are dependent τr/τnr, injection current. In regime, triggers slight shift frequency with reference solitary laser. At upmost levels current, highest value stabilizes stimulates it operate CW or PO. strong region, when increases, chaotic operation changed PO RIN suppressed close quantum level.